Metal-insulator transition by using Schottky barrier in layered WSe2 transistors
碩士 === 國立交通大學 === 電子物理系所 === 105 === We have made few-layer tungsten diselenide (WSe2) field-effect transistors by using mechanical exfoliation with electron beam lithography, thermal evaporation, and post-annealing. The thickness of WSe2 flakes is determined using atomic force microscope. The devic...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/kxs98j |