Effect of Rapid Thermal Annealing on the Ripening Mechanism of ZnTe/ZnCdSe Quantum Dots Grown by Molecular Beam Epitaxy
碩士 === 國立交通大學 === 電子物理系所 === 105 === In this work, ZnTe/ZnCdSe quantum dots sample were grown on GaAs (001) substrate with ZnSe buffer layer by molecular beam epitaxy (MBE). Photoluminescence (PL), temperature-dependent PL (TDPL), and time-resolved PL (TRPL) were used to investigate the optical prop...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/6jv52d |