Gate-Recessed Enhancement-Mode AlGaN/GaN HEMTs with Neutral Beam Etch Technology for High Frequency Power Applications
碩士 === 國立交通大學 === 影像與生醫光電研究所 === 105 === Enhancement-mode AlGaN/GaN high electron mobility transistors (HEMTs) have been extensively studied in recent years. The gate recess is a common method to realize the e-mode operation because it can suppress short-channel effect and enhance the gate controlla...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/90245486106800645542 |