Dynamic and Power-Delay Characteristic Fluctuation Induced by Nanosized Titanium Nitride Grains of Gate-All-Around Nanowire CMOS Circuits

碩士 === 國立交通大學 === 生醫工程研究所 === 105 === The semiconductor industry has become vigorous and developed for over 30 years, but now the IC industry has developed to ten nanometer level. In 2016, Intel has postponed the launch of 10-nm technology. It’s inevitable that Moore’s law has almost reached the lim...

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Bibliographic Details
Main Authors: Chao, Pei-Jung, 趙培蓉
Other Authors: Li, Yiming
Format: Others
Language:en_US
Published: 2017
Online Access:http://ndltd.ncl.edu.tw/handle/9958k4