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碩士 === 國立中央大學 === 電機工程學系 === 105 === GaN based devices are suitable candidates of low on resistance and high breakdown device because of high electron velocity and breakdown field in GaN materials. The major applications include RF power amplifiers and power switching. However, there is a serious cu...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/d42xj7 |