GeSn PIN Photodetector on Silicon Substrate by Rapid-Melting-Growth Technique
碩士 === 國立中央大學 === 電機工程學系 === 105 === With the rapid development of optical fiber communication systems, the integration of germanium with silicon has attracted much attention for both electronic and photonic devices, taking the advantage of narrow band gap as well as high electron and hole mobility....
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/b8362k |