The research of cleaning process with megasonic waves for SiC wafer

• Main Authors: Hui-Lung Yu, 游輝隆
• Other Authors: Xiong Li
• Format: Others
• Language: zh-TW
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/8c5t6j

碩士 === 國立中央大學 === 機械工程學系在職專班 === 105 === 3D IC through Silicon via (TSV) technology is regarded as the next generation of mainstream packaging. It’s different than traditional flat packaging. The 3D IC turns the wire through the TSV directly through the wafer and the lower contact. Originally, it must go through the path in order to reach three-dimensional stacked package in the plane. Now, it can be transmitted from a shorter path in the thickness of that direction to improve wafer efficiency and reduce wafer power. This research helped Grand Plastic Technology Corp Company fix and adjust. It’s cleaning machines. We are using the characteristics of the TSV structure. In the cleaning process different types of Bosch etch reactants and the chemical properties from the chemical process are analyzed in the TSV pore. Then we will prepare the best cleaning solution. TSV cleaning method uses mega sonic technology and features the characteristics of the mega sonic cleansing. The research explores the effects of mega sonic amplitudes at different frequencies on TSV cleaning. And then analyze the effect of TSV friction coefficient and amplitude of cleaning. The results of the establishment of the mechanical and electrical integration in automatic wet mega sonic cleaning machine have been analyzed.