Study of temperature effect on the growth of GaN-on-Si with metal-organic chemical vapor deposition
碩士 === 國立中央大學 === 光電科學與工程學系 === 105 === In recent years, the growth of GaN-on-silicon has attracted much research interests because of its low cost. However, some issues remain to be solved: (1) There is a large lattice mismatch between GaN and silicon, and this leads to high density of crystal defe...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/pv9xsw |