Measurement and Analysis of SiGe Bipolar Phototransistors with Body-strapped Base
碩士 === 國立彰化師範大學 === 電子工程學系 === 105 === In this thesis, high photoresponsivity SiGe bipolar transistors with body-strapped base were fabricated by TSMC BiCMOS technology. Their responsivities were characterized using 850 nm light under an irradiance of 1 mW/cm2. High responsivites of 3989 A/W and 222...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/7n5yrt |