Investigation on Reduced-Surface-Field Lateral-Diffusion MOSFETs
碩士 === 國立宜蘭大學 === 電子工程學系碩士班 === 105 === High power devices have recently been widely applied in the field of power electronics with the development of semiconductor industry. The structures of power devices are basically either horizontal or vertical. In order to better integrate power devices into...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/9s958h |