Growth and characterization of Mn doped nonpolar m-plane III-nitrides film by plasma-assisted molecular beam epitaxy
碩士 === 國立中山大學 === 物理學系研究所 === 105 === In this research, we grow m-plane gallium nitride on m-plane sapphire substrate using plasma-assisted molecular beam epitaxy (PAMBE)system with different plasma power and growth temperature. Then, we grow m-GaN doped Mn on the m-plane gallium nitride. A challeng...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/q7pj68 |