Fabrication of GaSb structures on Silicon Substrate by Rapid-Melting-Growth
碩士 === 國立清華大學 === 光電工程研究所 === 105 === In this thesis, structures made of III-V semiconductor Gallium Antimonide (GaSb) on silicon substrate by Rapid-Melt-Growth (RMG) method are investigated. Due to the relatively low melting point of GaSb (712 ℃) and small bandgap, it is an ideal material to be app...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/uky357 |