Study of Enhancement Mode InAs HEMTs with Field Plate Technologies for Low-Power Logic Application
碩士 === 國立清華大學 === 光電工程研究所 === 105 === In the recent years, high indium content InGaAs-based HEMTs have high potential for high-speed and low-power logic application. 90 nm gate length InAs-channel high electron mobility transistors (HEMTs) have then been fabricated with success and characterized for...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/88xt3f |