The study of Gate Dielectric Reliabilities of FinFETs
碩士 === 國立清華大學 === 電子工程研究所 === 105 === This thesis presents the studies of the gate dielectric reliabilities in FinFETs. Two topics are covered in this thesis: time dependent dielectric breakdown (TDDB) and negative bias temperature instability (NBTI). The TDDB of N type FinFETs were measured and...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/epurnd |