A Study of Hot Carrier Effects of N Channel FinFETs

碩士 === 國立清華大學 === 電子工程研究所 === 105 ===   In 1980, hot carrier instability (HCI) is the main problem of reliability in semiconductor industry. With the proposition of the Lucky Electron Model (LEM), the behavior of HC was well explained. However, based on LEM we expect that HCI will be unimportant for...

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Bibliographic Details
Main Authors: Lin, Che-Yu, 林哲宇
Other Authors: Lien, Chen-Hsin
Format: Others
Language:zh-TW
Published: 2016
Online Access:http://ndltd.ncl.edu.tw/handle/3esv2p