Investigation of Current Gain Improvement of AlGaN/GaN Heterojunction Bipolar Transistors
博士 === 國立清華大學 === 電子工程研究所 === 105 === AlGaN/GaN single heterojunction bipolar transistors (SHBTs) without using regrown emitter junction are demonstrated. Secondary ion mass spectroscopy analysis shows that a severe co-diffusion of Al and Si exists in AlGaN/GaN heterostructures grown at 780°C by pla...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/6b699g |