Process Study of Trapping and Blocking Layers on Gate-All-Around Junctionless Charge Trapping Flash Memory Devices
碩士 === 國立清華大學 === 工程與系統科學系 === 105 === In recent years, flash memory device can be continuously scaled down by continuous advance in process technology. However, the scale down of planar flash memory device can not be continued due to its limitation of shrinkage. How to increase the density of memor...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/79s7v3 |