Stacked Tunneling Layer on Poly-Ge Junctionless Charge Trapping Flash Memory Devices Formed by Low Temperature Processes
碩士 === 國立清華大學 === 工程與系統科學系 === 105 === Some approaches have been reported to improve operation characteristics of flash devices such as high-k materials, nanowire channel, junctionless channel, poly-Ge and SiGe buried channel. The carrier mobility of Ge is higher than that of Si. Poly-Ge devices can...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/9bexm7 |