High Mobility and Low EOT in Ge MOSFETs Fabricated by Engineering High-k/Metal Gate Stack
碩士 === 國立清華大學 === 工程與系統科學系 === 105 === Gate stack engineering is a big issue of Ge MOSFETs to realizing high performance. The consideration of EOT scaling and mobility degradation should be taken during the fabrication of gate stack. Two ways are generally proposed to enhance the drive current of a...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/5dvycq |