Fabrication of Tunnelling FET and the Analysis on the Trap-assisted tunneling
碩士 === 國立臺灣師範大學 === 光電科技研究所 === 105 === The steep subthreshold swing (S.S.) transistors may reduce power consumption and be a candidate of future generation technology node in CMOS industry. However, the subthreshold swing is limited by Boltzman tyranny 60 mV/dec, which restrictes the further reduce...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/sxhh95 |