Nano-Scale Structure with Lithography Process by Wavelength 365nm
碩士 === 國立臺灣師範大學 === 光電科技研究所 === 105 === Fin-type transistor has well gate control capability. This study will investigate photo lithography process to reach the nanometer scale fin/wall by wavelength 365nm without E-beam writer. We will design the dummy layout to protect and avoid damage the Fin. In...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/9svhs6 |