Nano-Scale Structure with Lithography Process by Wavelength 365nm
碩士 === 國立臺灣師範大學 === 光電科技研究所 === 105 === Fin-type transistor has well gate control capability. This study will investigate photo lithography process to reach the nanometer scale fin/wall by wavelength 365nm without E-beam writer. We will design the dummy layout to protect and avoid damage the Fin. In...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/9svhs6 |
| Summary: | 碩士 === 國立臺灣師範大學 === 光電科技研究所 === 105 === Fin-type transistor has well gate control capability. This study will investigate photo lithography process to reach the nanometer scale fin/wall by wavelength 365nm without E-beam writer. We will design the dummy layout to protect and avoid damage the Fin. In order to further reduce Fin width, the thermal oxidation process is used to comsumpt Si and obtains the nano-scale line width. The nano Fin/wall is successfull demonstrated with Fin width 8nm in this thesis.
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