Nano-Scale Structure with Lithography Process by Wavelength 365nm
碩士 === 國立臺灣師範大學 === 光電科技研究所 === 105 === Fin-type transistor has well gate control capability. This study will investigate photo lithography process to reach the nanometer scale fin/wall by wavelength 365nm without E-beam writer. We will design the dummy layout to protect and avoid damage the Fin. In...
Main Authors: | Kuo, Chun-Yueh, 郭峻岳 |
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Other Authors: | Lee, Min-Hung |
Format: | Others |
Language: | zh-TW |
Published: |
2017
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Online Access: | http://ndltd.ncl.edu.tw/handle/9svhs6 |
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