Study On Optoelectronics Properities of MoS2/GaN Two-Dimensional(2D)/Three-Dimensional(3D) Van Der Waals Force Heterojunctions
碩士 === 國立臺灣海洋大學 === 光電科學研究所 === 105 === In this paper, n-type molybdenum disulfide (MoS2) thin film layers were prepared by mechanical exfoliation method to fabricate the p-type gallium nitride/n-type molybdenum disulfide two-dimensional / three-dimensional heterostructure. The photoconductivity (PC...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/swsrq3 |