Study On Optoelectronics Properities of MoS2/GaN Two-Dimensional(2D)/Three-Dimensional(3D) Van Der Waals Force Heterojunctions
碩士 === 國立臺灣海洋大學 === 光電科學研究所 === 105 === In this paper, n-type molybdenum disulfide (MoS2) thin film layers were prepared by mechanical exfoliation method to fabricate the p-type gallium nitride/n-type molybdenum disulfide two-dimensional / three-dimensional heterostructure. The photoconductivity (PC...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2017
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Online Access: | http://ndltd.ncl.edu.tw/handle/swsrq3 |