Study On Optoelectronics Properities of MoS2/GaN Two-Dimensional(2D)/Three-Dimensional(3D) Van Der Waals Force Heterojunctions
碩士 === 國立臺灣海洋大學 === 光電科學研究所 === 105 === In this paper, n-type molybdenum disulfide (MoS2) thin film layers were prepared by mechanical exfoliation method to fabricate the p-type gallium nitride/n-type molybdenum disulfide two-dimensional / three-dimensional heterostructure. The photoconductivity (PC...
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| Format: | Others |
| Language: | zh-TW |
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2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/swsrq3 |
| Summary: | 碩士 === 國立臺灣海洋大學 === 光電科學研究所 === 105 === In this paper, n-type molybdenum disulfide (MoS2) thin film layers were prepared by mechanical exfoliation method to fabricate the p-type gallium nitride/n-type molybdenum disulfide two-dimensional / three-dimensional heterostructure. The photoconductivity (PC) characteristics of this structure under forward bias and reverse bias are studied. It was found that the n-type molybdenum disulfide / p-type gallium nitride heterostructures showed the persistent photoconductivity (PPC) characteristics under forward bias which was similar with that of pure molybdenum disulfide therefore the n-MoS2/p-GaN heterostructure is not suitable for the photodetector application. However, we found that under reverse bias, this structure exhibit a rapid rise and a rapid fall of photoconductive currents, which is suitable for the application as the light detectors.
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