Resistive Switching in ZnO Embedded Ⅲ-nitride Nanostructures
碩士 === 國立臺灣大學 === 光電工程學研究所 === 105 === In this thesis we demonstrate a new device mechanism and material system different from using metal oxide for realizing resistive random access memory (RRAM). We use plasma-enhanced atomic layer deposition (PEALD) to grow nitride films and oxide film. The nitri...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/m6rxqc |