Study on the InAs nanowire characteristics grown by a molecular beam epitaxy system
博士 === 國立臺灣大學 === 光電工程學研究所 === 105 === InAs is a promising material since it can apply in many electronic or optoelectronic devices. In the first part of this thesis, we had grown InAs nanowire on the nanotrench-patterned (001) Si substrate by using molecular beam epitaxy. Naturally, InAs nanowire g...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/gzmgqy |