Interfacial Electrical Properties of Y2O3/GaAs and Al2O3/GaAs MOS capacitors
碩士 === 國立臺灣大學 === 應用物理研究所 === 105 === Due to the relatively high electron mobility, GaAs and InGaAs are the leading candidates as n-channel materials in post-Si generation. In0.53Ga0.47As inversion channel n-MOSFETs have been demonstrated promising device performance using atomic-layer-deposited (AL...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/hyar9a |