Lithography Optimization considering Post-Exposure Bake and the Photo-Acid Effect for 10-nm Node and Beyond
博士 === 國立臺灣大學 === 電子工程學研究所 === 105 === As one of the critical stages of a very large scale integration fabrication process, post-exposure bake (PEB) plays a crucial role in determining the final three-dimensional (3-D) profiles and lessening the standing wave effects. However, the full 3-D chemicall...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/24377364865263256721 |