Effect of Sidewall Passivated Metal Gate on Fringing Field of MIS Tunnel Diode and Its Application
碩士 === 國立臺灣大學 === 電子工程學研究所 === 105 === In this thesis, a cost-effective and compatible method to form high-dielectric sidewall passivation layer on the edge of gate electrode was demonstrated. The effect of sidewall passivated metal gate on fringing field of MIS tunneling diode and its application a...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/dn7xn5 |