Temperature-dependent electroluminescence from GeSn planar light emitting diode on Si substrate
碩士 === 國立臺灣大學 === 電子工程學研究所 === 105 === In this study, GeSn is the main material of active layer grown by MBE (molecular beam epitaxy) for planar p-i-n light emitting diode. The higher electron mobility and smaller bandgap energy are the main reasons we chose GeSn for our experiment. Due to the widel...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/bt8z73 |