| Summary: | 碩士 === 國立臺灣大學 === 電子工程學研究所 === 105 === In this study, GeSn is the main material of active layer grown by MBE (molecular beam epitaxy) for planar p-i-n light emitting diode. The higher electron mobility and smaller bandgap energy are the main reasons we chose GeSn for our experiment. Due to the widely spread of infrared technical applications, we also can adjust Sn content in GeSn material to extend its wavelength of excitation so that different optical and electrical engineering application might be developed.
In particular, the electroluminescence from our GeSn p-i-n planar light emitting diode on Si was investigated under different temperatures ranging from 30 to 300 K. The light emitting diode was operated at the low current injection, and the I-V curve measurement was successfully carried out to verify its availability. We obtained no-phonon assisted band to band transition from indirect bandgap in electroluminescence emission spectra. Also, the relationship between indirect bandgap energy and temperature was investigated. The parameters of temperature-dependent bandgap energy followed Varshni’s empirical expression were investigated.
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