High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited oxide and metal gate stacks
碩士 === 國立臺灣大學 === 電子工程學研究所 === 105 === GaAs-based III-V compound semiconductors are one of the most promising channel material to extend Moore’s law beyond the limits of Si because of their high electron mobility. Owing to higher electron mobility and higher saturation velocity than Si, lots of effo...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/v44mrk |