Fabrication and Analysis of AlGaN/GaN High Power Density and RF HEMTs
碩士 === 國立臺灣大學 === 電子工程學研究所 === 105 === In this thesis, we take advantage of the superior properties of GaN, such as wide bandgap, high breakdown voltage, high electron mobility and high frequency response to fabricate the high power and RF devices with AlGaN/GaN heterostructures. The first part is...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/437ecw |