TCAD Design of InAs Gate-All-Around Nanowire Tunnel FET Structures
碩士 === 國立臺灣大學 === 電子工程學研究所 === 105 === The electrical characteristics of InAs-Si heterojunction GAA NW TFET are simulated using Sentaurus TCAD produced by Synopsys. Results show that InAs-Si heterojunction can enlarge the on-state current compared with Si homo-junction and GAA structure can improve...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/g73uyt |