Study of Two Dimensional Material Tungsten Disulfide Thin Film Transistors with Hexagonal Boron Nitride Substrate
碩士 === 國立臺灣大學 === 電子工程學研究所 === 105 === In this thesis, the mechanically exfoliated 2D material WS2 nanosheet was successfully used to fabricate thin film transistor. Using 3M scotch tape method and PDMS stamp can avoid the residues of 3M scotch tape being left on the surface of WS2. Using optical mi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/2fyvex |