Fabrication and characterization of GaN-based diodes and phototransistors formed by silicon diffusion process
碩士 === 國立臺灣科技大學 === 電子工程系 === 105 === In this paper, we fabricated AlGaInN-based near-ultraviolet (UV) p-i-n photodetectors and heterojunction phototransistors (HPTs). They were designed into two shapes which were square and rectangle. The HPTs on a commercial wafer with a light-emitting-diode (LED)...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/eu6k58 |