Response speed and optoelectronic characteristics of GaN based heterojunction phototransistors
碩士 === 國立臺灣科技大學 === 電子工程系 === 105 === In this paper, we characterized the GaN based phototransistors which made by seniors, including the dark current, external quantum efficiency (EQE), response speed, response time, noise of the phototransistor and the photocurrent versus incident light intensity....
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/89r2zj |