Fabrication and comparison of GaN-based p-i-n photodiode and reverse biased LED
碩士 === 國立臺灣科技大學 === 電子工程系 === 105 === In this paper, the use of commercial gallium nitride light emitting diode wafers, wafer number ELV (violet light) and FEB (Blue light), in these two wafers to produce a p-i-n photo detector and light emitting diode (LED). The difference between the two devices i...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/aq5r57 |