Investigation of Electrical Properties in Novel InGaP/GaAs/GaAsBi and InP/InGaAs Heterostructure Transistors
博士 === 國立高雄大學 === 電機工程學系碩博士班 === 105 === Heterostructure transistors based on III-V compound semiconductor material systems have been widely applied in digital and microwave circuit applications due to their excellent high-speed and microwave performances combined with high current driving capabi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/98626813940332651379 |