The Investigation of Defect Distribution of pFinFET by Random Telegraph Noise
碩士 === 國立高雄大學 === 電機工程學系碩博士班 === 105 === In past several decades, complementary metal-oxide-semicondutor (CMOS) technology has been development aggressively. In order to enhance device performance and suppress leakage for scaling device, high-k (HK) materials and metal gate (MG) electrodes have beco...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/39t6wz |