| Summary: | 碩士 === 國立臺北科技大學 === 材料科學與工程研究所 === 105 === The study use the high-purity tungsten target (4N) to produce thin film by RF magnetron sputtering and change the numbers of quasi-collimators The sputtering power and argon flow were changed when the sputtering time was fixed. To analyze the surface properties and the electrical properties of the tungsten thin film by altering sputter parameters (sputtering power: 150,200,250 W; argon flow: 30,40,50 sccm). The microstructures of thin films were analyzed by X-ray diffractometer. The surface morphology and thickness of the tungsten metal films were observed by electron microscopy. The electric resistivity of thin films was measured by a four-point probe. The roughness of thin films was measured by AFM. In the X-ray diffraction pattern, the sputtering power of 150 W or more, without quasi-collimator, sputtering have a obvious crystallization peak which is α phase (110) of the tungsten thin film; and the thin film is prepared by sputtering with quasi-collimator, then the β phase (210) appears. From the experimental results, it can be confirmed that the change of argon flow rate and the sputtering power can affect the properties of the thin film. In the case of thin film electrical measurement, in the sputtering method with the equipped quasi-collimator, it can observe that the thin film resistance is high (11.412Ω / Sq.). In the case of a fixed sputtering power of 150 W, 200 W, 250 W, increasing the argon flow (50 sccm) helps to enhance the crystallinity of the film and reduce the resistance. And result of atomic force microscopy appears that in the installation of multi-layer quasi-collimator and decreasing the flow of argon (30 sccm), the film surface is the flattest (2.123 nm).
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