Study of FinFET Technology for RF and Power Applications
碩士 === 國立臺北科技大學 === 電子工程系研究所 === 105 === With reducing the gate length of MOSFETs in advanced process technology, the short channel effects would be problematic. In recent years, FinFETs were developed to enable control of the short channel effects. We study the FinFET technology for RF and power ap...
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/46j8ra |