Thermoelectric Properties of Ge1-xBixTe (x= 0, 0.06~0.12)
碩士 === 國立臺北科技大學 === 製造科技研究所 === 105 === In this study, we report high-ZT Bi-doped GeTe single crystals which were grown by Bridgman method. From room-temperature X-ray diffraction patterns, the rhombohedral structure of GeTe is confirmed. The lattice constants of Bi-doped GeTe expend as Bi dopants i...
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| Format: | Others |
| Online Access: | http://ndltd.ncl.edu.tw/handle/c3227j |