Hot-Carrier Induced Degradation and its Recovery in HK/MG pMOSFETs
碩士 === 國立臺北科技大學 === 機電整合研究所 === 105 === Hot carrier (HC) effect has always been the major reliability issue to study. In early re-searches, the hot carrier induced degradation in pMOSFETs is negligible which was com-pared with nMOSFETs. It’s owing to the mean free path of holes is less than electron...
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| Format: | Others |
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2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/h7x2w4 |