Fabrication of Indium Doped ZnO Resistive Random Access Memories by Using a Sol-Gel Method
碩士 === 國立雲林科技大學 === 電子工程系 === 105 === In this study, an indium doped ZnO (IZO) layer fabricated by a sol-gel method was used as a resistance switching layer. First, effect of IZO concentration on IZO RRAM was studied. Then, based on the optimal IZO concentration, effect of IZO thickness on IZO RRAM...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/624khu |