Effects of Sol-Gel Concentration and Annealing Condition on Performance of Zinc Tin Oxide Thin Film Transistor
碩士 === 國立雲林科技大學 === 電子工程系 === 106 === In this research, we fabricated ZnSnO(ZTO) thin film transistor (TFT) by using a rapid and simple sol-gel method. The structure of the ZTO TFT was bottom-gate top-contact (BGTC). The structure was N+-Si/SiO2/ZnSnO/Al. To enhance the electrical properties of TFT,...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/85k5z3 |