Using Nitrogen Rapid Thermal Annealing to Enhance The Growth of Zinc Oxide Nanorods on p-GaN Substrate

碩士 === 中原大學 === 電子工程研究所 === 106 === In order to overcome the lattice mismatch of about 1.8% between ZnO nanorods and GaN substrate, the use of a thin ZnO seed layer has been reported by the majority of the literature. The quality of ZnO seed layer certainly then affected the overall luminous efficie...

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Bibliographic Details
Main Authors: Hong-Jhih Lin, 林宏治
Other Authors: Wu-Yih Uen
Format: Others
Language:zh-TW
Published: 2018
Online Access:http://ndltd.ncl.edu.tw/handle/p7t6bg