Preparation and Characterization of Bismuth (III) Sulfide Nanoparticles with Different PVA Concentrations

碩士 === 逢甲大學 === 化學工程學系 === 106 === Bismuth sulfide (Bi2S3) with a direct narrow band gap of around 1.3 eV has been attracting considerable attention due to its wide range of application in the field of photocatalysis or solar cells. In this study, PVA was used to prepare Bi2S3 semiconductor nanopart...

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Bibliographic Details
Main Author: 曾苡馨
Other Authors: Chan, Chih-Chieh
Format: Others
Language:zh-TW
Published: 2018
Online Access:http://ndltd.ncl.edu.tw/handle/ag8j4d