| Summary: | 碩士 === 逢甲大學 === 化學工程學系 === 106 === Bismuth sulfide (Bi2S3) with a direct narrow band gap of around 1.3 eV has been attracting considerable attention due to its wide range of application in the field of photocatalysis or solar cells. In this study, PVA was used to prepare Bi2S3 semiconductor nanoparticles by microemulsion and chemical precipitation method. Bi2S3 nanoparticles were synthesized by bismuth nitrate and sodium sulfide. Also experiment different concentrations of polyvinyl alcohol, Bi and S effect of Bi2S3 final particle size. The energy gap becomes smaller as the PVA concentration increases, down to 18 nm. Bi2S3 particles of different sizes can also be obtained by precipitation. By photocatalytic potential test, degradation ratio of 44.8% was obtained for the Bi2S3 by adding PVA, is higher 5% than without adding PVA.
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